Optical transitions in MnGa 2Se 4

Tagiev B., Kerimova T., Tagiev O., Əsədullayeva S., Mamedova I.

Semiconductors, vol.46, no.6, pp.705-707, 2012 (SCI-Expanded) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 46 Say: 6
  • Nəşr tarixi: 2012
  • Doi nömrəsi: 10.1134/s1063782612060243
  • jurnalın adı: Semiconductors
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.705-707
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Bəli

Qısa məlumat

The dependence of the absorption coefficient on incident photon energy in a MnGa 2Se 4 single crystal has been investigated in the temperature range 110-295 K. Using group-theory analysis of the electron state symmetry and comparison of the symmetry of the energy spectrum of MnGa 2Se 4 and its isoelectronic analogs, a conclusion about the character of optical transitions has been drawn. It is shown that the features observed at 2. 31 and 2. 45 eV are related to the intracenter transitions 6A 1 1 → 4T 2( 4G) and 6A 1 2 → 4T 2( 4G). The 6A 1 state is split by the crystal field. © 2012 Pleiades Publishing, Ltd.