Effect of Gamma Irradiation on the Thermal Switching of a GeS:Nd Single Crystal

Alekperov A. S., Dashdemirov A. O., Naghiyev T., Jabarov S. H.

SEMICONDUCTORS, vol.55, no.6, pp.574-577, 2021 (SCI-Expanded) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 55 Say: 6
  • Nəşr tarixi: 2021
  • Doi nömrəsi: 10.1134/s1063782621070034
  • jurnalın adı: SEMICONDUCTORS
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, INSPEC
  • Səhifə sayı: pp.574-577
  • Adres: Bəli

Qısa məlumat

The effect of the thermal switching of a layered GeS:Nd single crystal is investigated in a wide range of temperatures (T = 80-350 K). The effect of gamma irradiation on the thermal switching of a GeS:Nd single crystal is studied at different doses (30 and 100 krad). It is found that no thermal-switching effect is observed in the GeS:Nd crystal after gamma irradiation at low doses with the formation of an ordered structure. When the gamma irradiation increases to 100 krad, structure degradation is observed, as a result of which the crystal loses its photosensitivity, and no thermal-switching effect is detected.