Other, pp.25-30, 2012
Under various external conditions the basic characteristics and parameters of induced impurity photoconductivity (IIPC) in {rho}-GaSe crystals with various initial specific dark resistances have been investigated experimentally. It has appeared that in high-resistance crystals this photo-electric phenomen is accompanied by a number of anomalies. It is ascertained that IIPC found out in high-resistance {rho}-GaSe crystals are caused with partial disorder of these crystals.