Akademik Məlumat İdarəetmə Sistemi
18th International Conference on Photoelectronics and Night Vision Devices, Moscow, Russia, 25 - 28 May 2004, vol.5834, pp.260-263
By the method of landing to optical contact isotype n-InSe〈REE〉/ n-CuInSe2 heterojunctions with percentage of introduced impurity NREE = 0; 10-5; 10-4; 10-3; 10 -2 and 10-1 at.% rare-earth elements (REE) of gadolinium, Holmium and dysprosium have been created. Their photoelectric properties in photoconductivity, photo-e.m.f. and photovoltaic modes have been investigated at different orientations of incident light relative to contacting components and temperatures (at 77 and 300 K). Appreciable dependence of the basic photo-electric characteristics of investigated structures on NREE have been found out and mechanisms for their explanations have been offered.