BANDFILLING EFFECT IN GaSe AND InSe AT HIGH OPTICAL EXCHANGE LEVELS

Kyazim-Zade A. G., Salmanov V. M., Guseinov A. G., Jafarov M. A., Mamedov R. M., Rzayev R. M., ...daha çox

CHALCOGENIDE LETTERS, vol.16, no.10, pp.465-469, 2019 (SCI-Expanded) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 16 Say: 10
  • Nəşr tarixi: 2019
  • jurnalın adı: CHALCOGENIDE LETTERS
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.465-469
  • Adres: Bəli

Qısa məlumat

The absorption and luminescence spectra of thin films of gallium and indium monoselenide under the action of laser radiation are experimentally investigated. It is shown that the edge of the absorption band in the studied samples is due to direct optical transitions. The band gap, GaSe and InSe, determined from the alpha(2) similar to f(hv) dependence turned out to be 2.03 eV and 1.32 eV, respectively. At low excitation intensities by the 2nd harmonic of the YAG: Nd laser, luminescence is observed in the region of the edge of the absorption band. At high levels of optical excitation in the short-wave region of the spectrum, a narrow luminescence line with a half-width of similar to 10 A(0) was detected. The most possible mechanism of the observed radiation can be the effect of filling the zones with laser radiation.