BANDFILLING EFFECT IN GaSe AND InSe AT HIGH OPTICAL EXCHANGE LEVELS

Kyazim-Zade A. G., Salmanov V. M., Guseinov A. G., Jafarov M. A., Mamedov R. M., Rzayev R. M., ...More

CHALCOGENIDE LETTERS, vol.16, no.10, pp.465-469, 2019 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 16 Issue: 10
  • Publication Date: 2019
  • Journal Name: CHALCOGENIDE LETTERS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.465-469
  • Azerbaijan State University of Economics (UNEC) Affiliated: Yes

Abstract

The absorption and luminescence spectra of thin films of gallium and indium monoselenide under the action of laser radiation are experimentally investigated. It is shown that the edge of the absorption band in the studied samples is due to direct optical transitions. The band gap, GaSe and InSe, determined from the alpha(2) similar to f(hv) dependence turned out to be 2.03 eV and 1.32 eV, respectively. At low excitation intensities by the 2nd harmonic of the YAG: Nd laser, luminescence is observed in the region of the edge of the absorption band. At high levels of optical excitation in the short-wave region of the spectrum, a narrow luminescence line with a half-width of similar to 10 A(0) was detected. The most possible mechanism of the observed radiation can be the effect of filling the zones with laser radiation.