On the specific electrophysical properties of <i>n</i>-InSe single crystals

Abdinov A. S., Babaeva R., Rzaev R., Ragimova N. A., Amirova S. I.

SEMICONDUCTORS, vol.50, no.1, pp.34-37, 2016 (SCI-Expanded) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 50 Say: 1
  • Nəşr tarixi: 2016
  • Doi nömrəsi: 10.1134/s1063782616010024
  • jurnalın adı: SEMICONDUCTORS
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.34-37
  • Adres: Bəli

Qısa məlumat

The temperature dependences of physical parameters (the conductivity and the Hall constant) are experimentally investigated for pure indium-selenide (n-InSe) crystals and those lightly doped with rareearth elements (gadolinium, holmium, and dysprosium). It is established that the obtained results depend on the origin of the samples under investigation and prove to be contradictory for different samples. The obtained experimental results are treated taking into account the presence of chaotic large-scale defects and drift barriers caused by them in these samples.