On the specific electrophysical properties of <i>n</i>-InSe single crystals

Abdinov A. S., Babaeva R., Rzaev R. M., Ragimova N. A., Amirova S. I.

SEMICONDUCTORS, vol.50, no.1, pp.34-37, 2016 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 50 Issue: 1
  • Publication Date: 2016
  • Doi Number: 10.1134/s1063782616010024
  • Journal Name: SEMICONDUCTORS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.34-37
  • Azerbaijan State University of Economics (UNEC) Affiliated: Yes

Abstract

The temperature dependences of physical parameters (the conductivity and the Hall constant) are experimentally investigated for pure indium-selenide (n-InSe) crystals and those lightly doped with rareearth elements (gadolinium, holmium, and dysprosium). It is established that the obtained results depend on the origin of the samples under investigation and prove to be contradictory for different samples. The obtained experimental results are treated taking into account the presence of chaotic large-scale defects and drift barriers caused by them in these samples.