Electrical conductivity of undoped and rare-earth-doped high-resistivity GaSe crystals

Abdinov A., Allakhverdiev S., Babaeva R., Rzaev R.

INORGANIC MATERIALS, vol.45, pp.723-727, 2009 (SCI-Expanded)

  • Publication Type: Article / Article
  • Volume: 45
  • Publication Date: 2009
  • Journal Name: INORGANIC MATERIALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.723-727
  • Azerbaijan State University of Economics (UNEC) Affiliated: No

Abstract

The time-dependent conductivity of nominally undoped and rare-earth-doped (N R≃10 -5 to 10 -1 at % Gd, Dy, or Ho) high-resistivity gallium selenide crystals has been measured under various conditions. At a relatively low applied voltage and T ≤ 150 K, the conductivity of the crystals reaches a steady-state value rather slowly. When a voltage above a certain threshold is applied for a long time at T ≤ 300 K, the material exhibits electric fatigue. An energy-band model is proposed which provides qualitative explanation of the results.