Research Information System
Advanced data Storage Materials and Characterization Techniques, Boston, MA, United States Of America, 01 December 2003 - 04 December 2004, vol.803, pp.119-124, (Full Text)
Room temperature ellipsometric measurements of low dimensional TlMeX 2 (Me=Ga, In; X=S,Se,Te) were performed in the photon energy range 1.5-6.5eV. Obtained ellipsometric data were then treated with allowance for optical anisotropy of the above materials. The components of dielectric function tensor were determined. The structures of the obtained dielectric function are interpreted in terms of the angle resolved photoemission and band structure results. The contribution of the atomic states of each atom (Tl, In, Se) in the band states in the point M of the Brillouin zone is traced back using LCAO analysis. An ultraviolet window in the joint density of electronic states of some of TlMeX2 is disclosed and substantiated to be a sign of ferroelectricity at room temperature. For the first time the nanorods of TlMeX2 are demonstrated.