Electronic Structure and Dielectric Functions of GaInS3 from Ab initio and Experimental Studies

Cahangirli , Zakir; Rahimli, A.B.; MEHDİYEV , BAXŞI; Seidov, R.G.; Bayramova, T.O.; Osmanova, S.S.; Guliyev, J.A.

doi:10.1134/s1063783425600980

Electronic Structure and Dielectric Functions of GaInS3 from Ab initio and Experimental Studies

Cahangirli Z., Rahimli A., MEHDİYEV B., Seidov R., Bayramova T., Osmanova S., ...daha çox

Physics of the Solid State, vol.67, no.5, pp.373-377, 2025 (SCI-Expanded, Scopus)

Nəşrin Növü: Article / Article
Cild: 67 Say: 5
Nəşr tarixi: 2025
Doi nömrəsi: 10.1134/s1063783425600980
jurnalın adı: Physics of the Solid State
Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, INSPEC
Səhifə sayı: pp.373-377
Açar sözlər: band structure, density functional theory, dielectric function, partial density of states, spectral ellipsometry
Açıq Arxiv Kolleksiyası: Məqalə
Adres: Bəli

Qısa məlumat

Abstract: Band structure and dielectric functions of GaInS3 studied experimentally by spectral ellipsometry and theoretically using density functional theory (DFT). The real and imaginary components of optical functions measured from 0.7 to 6.5 eV. The band gap was determined from the computed density of states (DOS). An analysis of atom-projected partial density of states (PDOS) provided insights into the nature of chemical bonding in GaInS3.