Electronic Structure and Dielectric Functions of GaInS3 from Ab initio and Experimental Studies
Physics of the Solid State, vol.67, no.5, pp.373-377, 2025 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 67 Issue: 5
- Publication Date: 2025
- Doi Number: 10.1134/s1063783425600980
- Journal Name: Physics of the Solid State
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, INSPEC
- Page Numbers: pp.373-377
- Keywords: band structure, density functional theory, dielectric function, partial density of states, spectral ellipsometry
- Open Archive Collection: Article
- Azerbaijan State University of Economics (UNEC) Affiliated: Yes
Abstract
Abstract: Band structure and dielectric functions of GaInS3 studied experimentally by spectral ellipsometry and theoretically using density functional theory (DFT). The real and imaginary components of optical functions measured from 0.7 to 6.5 eV. The band gap was determined from the computed density of states (DOS). An analysis of atom-projected partial density of states (PDOS) provided insights into the nature of chemical bonding in GaInS3.