Bulk and surface electron dynamics in a p -type topological insulator SnSb 2 Te 4

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Niesner D., Otto S., Hermann V., Fauster T., Menshchikova T., Eremeev S., ...daha çox

Physical Review B - Condensed Matter and Materials Physics, vol.89, no.8, 2014 (SCI-Expanded, Scopus)

• Nəşrin Növü: Article / Article
• Cild: 89 Say: 8
• Nəşr tarixi: 2014
• Doi nömrəsi: 10.1103/physrevb.89.081404
• jurnalın adı: Physical Review B - Condensed Matter and Materials Physics
• Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Açıq Arxiv Kolleksiyası: Məqalə
• Adres: Bəli

Qısa məlumat

Time-resolved two-photon photoemission was used to study the electronic structure and dynamics at the surface of SnSb2Te4, a p-type topological insulator. The Dirac point is found 0.32±0.03 eV above the Fermi level. Electrons from the conduction band minimum are scattered on a time scale of 43±4 fs to the Dirac cone. From there they decay to the partly depleted valence band with a time constant of 78±5 fs. The significant interaction of the Dirac states with bulk bands is attributed to their bulk penetration depth of ∼3 nm as found from density functional theory calculations. © 2014 American Physical Society.