Research Information System
International Journal of Infrared and Millimeter Waves, vol.18, no.9, pp.1813-1820, 1997 (SCI-Expanded)
Thin films of Bi85Sb15 solid solution wich can be used in thermoelectric devices for cooling and stabilizing the temperature of Gann and Impatt diodes have been obtained by extrusion method. They have surface roughness in the range 10-80 μm, dielectric losses tan δ∼ 10-3 at 10 GHz, thermal conductivity β∼ 4×102 W / (M·K). Anisotropy of electroconductivity σ, thermoelectric power α and Hall coefficients RH of lead doped extruded Bi85Sb15 samples has been investigated in the temperature range between 77 K and 300 K and in the presence of magnetic field H up to ∼ 74×104 A/m. It is shown that the value and sign of the anisotropy coefficient essentially depend on heat treatment and impurity concentration. Experimental results are explained taking into account a crystal structure of Bi85Sb15, formation of texture and generation of deformation defects.