Near-Infrared Photoluminescence from ZnIn2S4 Layered Single Crystals

Əsədullayeva S., Cahangirli Z., Musayev M., Eyyubov Q., Abiyev A.

Physics of the Solid State, vol.67, no.6, pp.429-432, 2025 (SCI-Expanded, Scopus) identifier identifier

  • Publication Type: Article / Article
  • Volume: 67 Issue: 6
  • Publication Date: 2025
  • Doi Number: 10.1134/s1063783425601067
  • Journal Name: Physics of the Solid State
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, INSPEC
  • Page Numbers: pp.429-432
  • Keywords: band gap, color coordinates, donor and acceptor levels, photoluminescence, PLE
  • Open Archive Collection: Article
  • Azerbaijan State University of Economics (UNEC) Affiliated: Yes

Abstract

Abstract: This study presents investigation of the photoluminescence (PL) properties of ZnIn2S4 single crystals. The PL emission characteristics were performed across a temperature spectrum spanning from 5 to 300 K. The PL emission maxima were observed in the infrared region at a wavelength of 725 nm (1.71 eV). At lower temperatures, this peak undergoes a blue shift, moving towards higher energies. At 5 K, the peak shifted by 40 nm, being observed at 685 nm (1.81 eV). At ambient temperature, the photoluminescence excitation (PLE) analysis of ZnIn2S4 revealed distinct spectral maxima at 2.75 eV (450 nm) and 2.33 eV (530 nm), corresponding to electronic transitions from the valence band to the conduction band, and from defect states to the conduction band, respectively.