Near-Infrared Photoluminescence from ZnIn2S4 Layered Single Crystals

Əsədullayeva S., Cahangirli Z., Musayev M., Eyyubov Q., Abiyev A.

Physics of the Solid State, vol.67, no.6, pp.429-432, 2025 (SCI-Expanded, Scopus) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 67 Say: 6
  • Nəşr tarixi: 2025
  • Doi nömrəsi: 10.1134/s1063783425601067
  • jurnalın adı: Physics of the Solid State
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, INSPEC
  • Səhifə sayı: pp.429-432
  • Açar sözlər: band gap, color coordinates, donor and acceptor levels, photoluminescence, PLE
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Bəli

Qısa məlumat

Abstract: This study presents investigation of the photoluminescence (PL) properties of ZnIn2S4 single crystals. The PL emission characteristics were performed across a temperature spectrum spanning from 5 to 300 K. The PL emission maxima were observed in the infrared region at a wavelength of 725 nm (1.71 eV). At lower temperatures, this peak undergoes a blue shift, moving towards higher energies. At 5 K, the peak shifted by 40 nm, being observed at 685 nm (1.81 eV). At ambient temperature, the photoluminescence excitation (PLE) analysis of ZnIn2S4 revealed distinct spectral maxima at 2.75 eV (450 nm) and 2.33 eV (530 nm), corresponding to electronic transitions from the valence band to the conduction band, and from defect states to the conduction band, respectively.