Ab initio calculations of the electron spectrum and density of states of TlFeS2 and TlFeSe2 crystals

Ismayilova N., Orudjev H., Jabarov S.

Semiconductors, vol.51, no.4, pp.473-476, 2017 (SCI-Expanded, Scopus) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 51 Say: 4
  • Nəşr tarixi: 2017
  • Doi nömrəsi: 10.1134/s1063782617040078
  • jurnalın adı: Semiconductors
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.473-476
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Yox

Qısa məlumat

The results of ab initio calculations of the electron spectrum of TlFeS2 and TlFeSe2 crystals in the antiferromagnetic phase are reported. Calculations are carried out in the context of the density functional theory. The origin of the bands of s, p, and d electron states of Tl, Fe, S, and Se atoms is studied. It is established that, in the antiferromagnetic phase, the crystals possess semiconductor properties. The band gaps are found to be 0.05 and 0.34 eV for TlFeS2 and TlFeSe2 crystals, respectively.