Thin ZnTe:Cu Films Fabricated by Pulse Laser Deposition
PHYSICS OF THE SOLID STATE, vol.66, no.12, pp.670-673, 2024 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 66 Issue: 12
- Publication Date: 2024
- Doi Number: 10.1134/s1063783424601656
- Journal Name: PHYSICS OF THE SOLID STATE
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.670-673
- Azerbaijan State University of Economics (UNEC) Affiliated: No
Abstract
Thin ZnTe:Cu films are prepared by pulse laser deposition. ZnTe films were doped with Cu to increase the p type carrier concentration and to state the influence of the Cu concentration on their structural, optical, and electrical properties and also to consider their potential applications in electronic devices. X-ray diffraction studies, studies of X-ray photoelectron spectroscopy, UV-visible spectroscopy, and the Hall effect of ZnTe:Cu films are performed.