Spontaneous and Stimulated Low-Temperature Electroluminescence of GaSe

Abutalybov G., Ragimova N., Dzhafarova S.

OPTICS AND SPECTROSCOPY, vol.95, pp.80-84, 2003 (SCI-Expanded)

  • Nəşrin Növü: Article / Article
  • Cild: 95
  • Nəşr tarixi: 2003
  • Doi nömrəsi: 10.1134/1.1595217
  • jurnalın adı: OPTICS AND SPECTROSCOPY
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.80-84
  • Adres: Yox

Qısa məlumat

Stimulated emission of the quasi-two-dimensional layered semiconductor GaSe in high electric fields and at different orientations of the applied electric field relative to the optical axis of samples was observed and studied. The electric field dependences of the polarized spectrum intensity and electroluminescence quantum yield were determined. Three mechanisms of amplification near the fundamental absorption edge, related to combined interaction of defects and free direct and indirect excitons, were identified. (C) 2003 MAIK "Nauka/Interperiodica".