Localization effects in thin films of bi2te2.7 se0.3 thermoelectric compound

Abdullaev N., Alekperov O., Aligulieva K. V., Zverev V., Kerimova A., MƏMMƏDOV N.

Journal of Thermoelectricity, no.3, pp.30-35, 2017 (Scopus) identifier

  • Nəşrin Növü: Article / Article
  • Nəşr tarixi: 2017
  • jurnalın adı: Journal of Thermoelectricity
  • Jurnalın baxıldığı indekslər: Scopus
  • Səhifə sayı: pp.30-35
  • Açar sözlər: Conductivity, Localization, Magnetoresistance, Thin films, Topological insulator, Weak anti-localization, Weak localization
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Bəli

Qısa məlumat

Thin films of Bi2Te2.7Se0.3 thermoelectric compound were prepared using “hot wall” method by thermal evaporation in vacuum. High quality of the resulting thin films is proved by the data of X-ray diffraction and Raman scattering. Electron transport was investigated in a wide range of temperatures 1.4 – 300 K and magnetic fields up to 8 Т. In the temperature dependence of electric conductivity at temperatures below 10 K there is localization of electrons caused by electron-electron interaction in a two-dimensional limit. It is supposed that the observed weak anti-localization in the field dependence of magnetoresistance is caused by the dominant contribution of surface states of a topological insulator. The length of phase failure was estimated. Bibl. 9, Fig. 2.