Photoelectret effect in polymer-photosensitive semiconductor n-InSe composites

Ziyad D. S., Fikret B. R.

MOLECULAR CRYSTALS AND LIQUID CRYSTALS, vol.717, no.1, pp.47-53, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 717 Issue: 1
  • Publication Date: 2021
  • Doi Number: 10.1080/15421406.2020.1860527
  • Journal Name: MOLECULAR CRYSTALS AND LIQUID CRYSTALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.47-53
  • Azerbaijan State University of Economics (UNEC) Affiliated: Yes

Abstract

The photoelectret property of a high-density polyethylene (HDPE)-semiconductor (n-InSe) composite is investigated. It was found that the magnitude of the photoelectret potential non-monotonically depends on the n-InSe content. Treatment under the action of an electric discharge plasma in an electronegative gas significantly affects the magnitude of the photoelectret potential and its dependence on the content of the semiconductor filler in the composite. It is shown that in the considered case the main source of electric charge generation is the filler, and in the process of polarization the determining one is the electric field at the polymer-semiconductor interface. This composite is promising for optoelectronics.