Effect of High Pressure on the Electrical Conductivity of TlInX2 (X = Se, Te) Layered Semiconductors


Rabinal M., Titus S., Asokan S., Gopal E., Godzaev M., MƏMMƏDOV N.

physica status solidi (b), vol.178, no.2, pp.403-408, 1993 (Scopus) identifier

  • Publication Type: Article / Article
  • Volume: 178 Issue: 2
  • Publication Date: 1993
  • Doi Number: 10.1002/pssb.2221780217
  • Journal Name: physica status solidi (b)
  • Journal Indexes: Scopus
  • Page Numbers: pp.403-408
  • Open Archive Collection: Article
  • Azerbaijan State University of Economics (UNEC) Affiliated: Yes

Abstract

The dc electrical conductivity of TlInX2 (X = Se, Te) single crystals, parallel and perpendicular to the (001) c‐axis is studied under high quasi‐hydrostatic pressure up to 7.0 GPa, at room temperature. Conductivity measurements parallel to the c‐axis are carried out at high pressures and down to liquid nitrogen temperatures. These materials show continuous metallization under pressure. Both compounds have almost the same pressure coefficient of the electrical activation energy parallel to the c‐axis, d(ΔE∥)/dP = −2.9 × 10−10 eV/Pa, which results from the narrowing of the band gap under pressure. The results are discussed in the light of the band structure of these compounds. Copyright © 1993 WILEY‐VCH Verlag GmbH & Co. KGaA