Sol-Gel Synthesis of Zinc Oxide Thin Films
SEMICONDUCTORS, vol.59, no.4, pp.369-373, 2025 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 59 Issue: 4
- Publication Date: 2025
- Doi Number: 10.1134/s1063782624602103
- Journal Name: SEMICONDUCTORS
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, INSPEC
- Page Numbers: pp.369-373
- Azerbaijan State University of Economics (UNEC) Affiliated: No
Abstract
ZnO thin films are deposited onto indium tin oxide (ITO) glass substrates by sol-gel coating at different preparation parameters: sol concentrations and annealing temperatures. The synthesized samples are characterized by ultraviolet-visible (UV-Vis) spectrophotometry, X-ray diffractometry, scanning electron microscopy, and energy-dispersive X-ray (EDX) spectroscopy. The results obtained show that the band gap energy decreases from 3.25 to 3.18 eV with an increase in the sol concentration and a similar decrease at higher annealing temperatures. X-ray diffraction patterns show a smaller full width at half maximum of the most intense (002) peak at higher sol concentrations and annealing temperatures. EDX analysis confirms the formation of high-purity ZnO thin films on ITO glass substrates.