Akademik Məlumat İdarəetmə Sistemi
Indian Journal of Physics, vol.99, no.13, pp.5039-5044, 2025 (SCI-Expanded, Scopus)
Diluted magnetic semiconductor compounds are of significant interest for their potential applications in spintronic devices. In this study, we investigated the magnetic properties of InSb nanosheet induced by Mn doping. Using density functional theory (DFT), we initially examined Mn atom doped (with different concentration-2.08, 4.16 and 6.25%) InSb nanosheet at distinct In sites. Our results revealed that Mn doping at either concentration leads to spin splitting in the density of states, indicating that Mn incorporation induces magnetism in InSb nanosheet. PDOS plot of Mn doped InSb nanosheet indicate spin down have a band gap and exhibit semiconductor properties while spin up states don’t preserve a wide band gap such as in spin down, additional mid gap levels were observed in forbidden gap. So, weak hybridization between Mn 3d state and 5p, 5 s states of In and 5p state of Sb atoms was observed. Detailed analysis reveals that high concentration of Mn atoms induce half metallic properties in InSb nanosheet which has different potential applications specially in spintronic device.