Modeling defect formation in nano-ZrO2 under He and H+ irradiation


Imanova G.

Modern Physics Letters B, vol.38, no.22, 2024 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 38 Issue: 22
  • Publication Date: 2024
  • Doi Number: 10.1142/s0217984924502063
  • Journal Name: Modern Physics Letters B
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, INSPEC, zbMATH
  • Keywords: defect formation, H+ ions, PLTS, Vacancy clusters, ZrO2 crystal
  • Azerbaijan State University of Economics (UNEC) Affiliated: No

Abstract

In the given work, compliance with the distribution law of defect vacancies formed in ZrO2 crystal irradiated with 2MeV energy H+ ions at room temperature was studied (The fluxes density for the H+ ion was chosen to be 1017 ions/cm2). The effect of H+ ions with fluxes density at different temperatures (500°C, 600°C, 700°C, 800°C and 900°C) on W and S parameters was determined. The mechanism of formation of nanoclusters in the ZrO2 crystal structure under the influence of H+ radiation, the vacancy cluster formed by 2Zr vacancies and 4O vacancies, and its location in triple spaces with hydrogen atoms were determined. 2Zr and 4 vacancies were determined by the τ values of the vacancy clusters growing under the influence of radiation and the positions of hydrogen atoms in the 1VZr, 1VO, di-VZrO triple-VZrO2 vacancy groups.