Raman scattering in the Bi 2(Te 0.9Se 0.1) 3 solid solution films

Abdullaev N., Abdullaev N., Kerimova A., Kahramanov S. S., Bayramov A., Miyamoto H., ...daha çox

Semiconductors, vol.46, no.9, pp.1140-1144, 2012 (SCI-Expanded, Scopus) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 46 Say: 9
  • Nəşr tarixi: 2012
  • Doi nömrəsi: 10.1134/s1063782612090023
  • jurnalın adı: Semiconductors
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.1140-1144
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Bəli

Qısa məlumat

The Bi 2(Te 0.9Se 0.1) 3 solid solutions thin films are produced by "hot wall" thermal evaporation in vacuum. From the data of X-ray diffraction studies, atomic-force microscopy of the surface relief, and Raman spectroscopy, it is established that vacuum thermal annealing at a temperature of 200°C for 1 h substantially increases the degree of film crystallization. The laser radiation excitation power optimal for studies of the Raman spectra of the Bi 2(Te 0.9Se 0.1) 3 films is determined. © 2012 Pleiades Publishing, Ltd.