MICROELECTRONIC SWITCH BASED ON SEMICONDUCTOR (In2Te3)0.97(MnTe2)0.03
Advanced Physical Research, vol.7, no.1, pp.118-122, 2025 (Scopus)
- Publication Type: Article / Article
- Volume: 7 Issue: 1
- Publication Date: 2025
- Doi Number: 10.62476/apr.71118
- Journal Name: Advanced Physical Research
- Journal Indexes: Scopus
- Page Numbers: pp.118-122
- Keywords: solid solution, switching effect, thin films, volt-ampere characteristic
- Open Archive Collection: Digital Heritage Collection
- Azerbaijan State University of Economics (UNEC) Affiliated: No
Abstract
It has been found that the switching effect occurs in the In2Te3 semiconductor compound and solid solution crystals based on it. With this in mind, a thin-film microelectronic switch was created based on the (In2Te3)0.97(MnTe2)0.03 solid solution crystal, and its important characteristics were studied. It has been established that the switching mechanism in this semiconductor material has an electronic-thermal character and varies with temperature.