RUSSIAN PHYSICS JOURNAL, vol.60, no.12, pp.2144-2148, 2018 (SCI-Expanded)
The paper deals with crystallization kinetics of amorphous AgInS2 film. The dependence between lnln(V-0 / (V-0 -V-t) and lnt is obtained for 423, 448 and 468 K temperatures, which shows a linear arrangement of points for these temperatures, i.e. 2.80 2.87 and 2.93, respectively. The approximate equality of these values indicates that during AgInS2 film crystallization, a two-dimensional crystal growth occurs and the reaction rate constant equals (1/3 pi).