Ab-Initio Calculation of Electronic Properties of Doped GaN Nanoribbon

Ismayilova N.

International Journal of Nanoscience, vol.23, no.5, 2024 (ESCI, Scopus) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 23 Say: 5
  • Nəşr tarixi: 2024
  • Doi nömrəsi: 10.1142/s0219581x24500066
  • jurnalın adı: International Journal of Nanoscience
  • Jurnalın baxıldığı indekslər: Emerging Sources Citation Index (ESCI), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Biotechnology Research Abstracts, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, Metadex, Civil Engineering Abstracts
  • Açar sözlər: approximation, DFT, magnetic moment, nanoribbon
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Yox

Qısa məlumat

In this study, the electronic and magnetic properties of hydrogen-passivated armchair and zigzag GaN nanoribbons are investigated using density-functional theory. We explore that doped TM atom leads to additional levels in the band gap and thus plays an essential role in spin polarization and changes their properties. Depending on its location in the nanoribbon, the character of spin-dependent electronic property of a doped GaN-NR was analyzed. Our calculations show that, regardless of the position of Mn atoms, GaNNTs are stable in ferromagnetic phase.