A New Method of Obtaining an n–p-Structure on the Basis of the Defective Semiconductor AgIn5S8

Guseinov, A.G.; Salmanov, V.M.; Məmmədov , Rövşən; Dzhabrailova, R.; Magomedov, A.Z.

doi:10.1007/s11182-018-1277-x

A New Method of Obtaining an n–p-Structure on the Basis of the Defective Semiconductor AgIn5S8

Guseinov A., Salmanov V., Məmmədov R., Dzhabrailova R., Magomedov A.

Russian Physics Journal, vol.60, no.10, pp.1747-1751, 2018 (SCI-Expanded, Scopus)

Nəşrin Növü: Article / Article
Cild: 60 Say: 10
Nəşr tarixi: 2018
Doi nömrəsi: 10.1007/s11182-018-1277-x
jurnalın adı: Russian Physics Journal
Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Səhifə sayı: pp.1747-1751
Açar sözlər: annealing, current-voltage characteristic, defective semiconductor, laser, n–p-structure
Adres: Bəli

Qısa məlumat

The type of electrical conductivity of А1В3 5С6 8 semiconductor compounds with defective crystalline structure is modified by the influence of powerful laser radiation. It is shown that at certain power and wavelength of laser radiation acting on the single-crystal п-AgIn5S8, an area with the p-type of conductivity is formed in the irradiated region of the crystal. Current-voltage characteristics of homo-junctions created on the basis of n-AgIn5S8 are recorded.