Temperature dependence of photoconductivity in layered semiconductor p-GaSe

Naghiyev T., Babayeva R., Aliyev Y.

European Physical Journal B, vol.97, no.6, 2024 (SCI-Expanded) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 97 Say: 6
  • Nəşr tarixi: 2024
  • Doi nömrəsi: 10.1140/epjb/s10051-024-00731-2
  • jurnalın adı: European Physical Journal B
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, Compendex, INSPEC, MEDLINE, zbMATH
  • Adres: Bəli

Qısa məlumat

The temperature dependence of photoconductivity in p-GaSe crystals with different initial (having at 77 K) dark resistivities (ρ77 = 2·103 ÷ 7·106 Ω·cm) was experimentally studied in the temperature range of 77 ÷ 300 K. It has been established that in crystals with ρ77 < 104 Ω cm, only the value of the photocurrent changes depending on temperature. At T ≤ 250 K, in the higher-resistivity crystal, the spectral distribution, lux-ampere characteristic, as well as photoconductivity kinetics also change noticeably with a change in temperature. The obtained experimental results are explained on the basis of a model of crystalline semiconductor with random macroscopic defects. Graphical abstract: (Figure presented.)