Akademik Məlumat İdarəetmə Sistemi
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, vol.35, no.07, 2021 (SCI-Expanded)
Extruded samples of Bi85Sb15 solid solutions doped with 0.0005 at.% Te were obtained and the electrical conductivity (sigma), thermoelectric power (Seebeck) (alpha), Hall (R-h) and thermal conductivity (chi) coefficients were investigated in the range similar to 80-300 K samples and magnetic field strength up to 74 x 10(4) A/m, as annealed after extrusion, non-irradiated with gamma-quanta and the same samples irradiated with gamma quanta at different doses. It was found that at low doses (1 Mrad) of irradiation, radiation defects (RDs) appear in the samples which play the role of donor centers, as a result of which the concentration of free electrons n, and, consequently the electrical conductivity sigma increases, and the Seebeck coefficient alpha decreases. These defects, scattering the current carriers, reduce their mobility mu. With an increase in the radiation dose, the concentration of defects also increases and free carriers are captured at the level of the RD. In this regard, the concentration of charged carrier defects n and, consequently, sigma of the sample decrease, while the Seebeck coefficient and mobility increase. The effect of a magnetic field on the electrical and thermal parameters of extruded solid solution samples also depends on the radiation dose in the sample.