Influence of Doping of TlInS2 Crystals with Cr and Au Transition Metals on Their Optical Absorption Edge

Ismayilova P., Gasanov N., HACIYEVA A.

Semiconductors, vol.59, no.2, pp.162-166, 2025 (SCI-Expanded) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 59 Say: 2
  • Nəşr tarixi: 2025
  • Doi nömrəsi: 10.1134/s1063782624602826
  • jurnalın adı: Semiconductors
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, INSPEC
  • Səhifə sayı: pp.162-166
  • Açar sözlər: bandgap, optical absorption edge, semiconductor, solid solution, transition metal
  • Adres: Bəli

Qısa məlumat

Abstract: Single crystals of solid solutions based on the layered semiconductor compound TlInS2 were grown with the addition of transition metals chromium and gold at concentrations up to 1 mol %, and their X-ray diffraction patterns were obtained. These crystals have the same space groups and similar lattice parameters, although a slight decrease in the c parameter is observed. Thus, the TlInS2〈Cr〉 and TlInS2〈Au〉 crystals belong to the monoclinic phase and are isostructural with the TlInS2 crystal. The optical absorption edge of the obtained TlInS2〈Cr〉, TlInS2〈Au〉 solid solutions was studied in the temperature range of 100–300 K. The temperature dependence of the bandgap energy of these compounds was determined.