Optical and Photoelectric Properties of GaS Thin Films and GaS/InSe Heterostructure

Guseinov A., Salmanov V., Məmmədov R., Salmanova A., Akhmedova F.

Optics and Spectroscopy, vol.126, no.5, pp.458-462, 2019 (SCI-Expanded, Scopus) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 126 Say: 5
  • Nəşr tarixi: 2019
  • Doi nömrəsi: 10.1134/s0030400x19050102
  • jurnalın adı: Optics and Spectroscopy
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.458-462
  • Adres: Bəli

Qısa məlumat

Abstract: GaS thin films have been grown by the SILAR method, their structures have been analyzed, and their optical and photoelectric properties have been investigated. The internal structure of the samples obtained have been studied using X-ray diffraction (XRD) analysis, atomic force microscopy (AFM), energy-dispersive X-ray (EDX) spectroscopy, and scanning electron microscopy (SEM). The GaS band gap has been determined from the absorption spectrum. p-GaS/n-InSe heterojunctions have been formed on the basis of GaS crystals and InSe thin films. Current–voltage, optical, photoelectric, and luminescence characteristics of p-GaS/n-InSe heterojunctions have been experimentally investigated.