Semiconducting asphaltene thin films: Preparation and characterization

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Nassar I. M., Mamiyev Z., Khalilova K., Mammadov E., Aliyeva Y., Alekperov O., ...daha çox

Physica Status Solidi (C) Current Topics in Solid State Physics, vol.12, no.6, pp.553-555, 2015 (Scopus)

• Nəşrin Növü: Article / Article
• Cild: 12 Say: 6
• Nəşr tarixi: 2015
• Doi nömrəsi: 10.1002/pssc.201400365
• jurnalın adı: Physica Status Solidi (C) Current Topics in Solid State Physics
• Jurnalın baxıldığı indekslər: Scopus
• Səhifə sayı: pp.553-555
• Açar sözlər: Asphaltene thin films, Conductivity, Electron paramagnetic resonance, Photoluminescence, Spectroscopic ellipsometry
• Açıq Arxiv Kolleksiyası: Məqalə
• Adres: Bəli

Qısa məlumat

Asphaltene thin films of 100-500 nm thicknesses were deposited on soda lime glass substrates from toluene solution by spray pyrolysis method. Atomic force microscopy (AFM), photoluminescence (PL), spectroscopic ellipsometry (SE), and electron paramagnetic resonance (EPR) methods were used for characterization of the films. The obtained films were found to be broad band semiconducting material with band gap energy ~ 3.1 eV and exhibited n-type conductivity with resistivity ρ ~ 8·102Ω·cm. Concentration of free radicals and g-factor were about of ~ 1018 spin/g and 2.00307, respec-tively.