Akademik Məlumat İdarəetmə Sistemi
International Conference on Modern Trends in Physics, Baku, Azerbaijan, 20 - 22 April 2017, pp.58-60
The dependences of the kinetic parameters on the temperature, electric field, doping, and technological pre-history of the samples of single crystals of the layered A(III)B(VI) compounds has been studied experimentally. It is found that values of samples resistivity of with different technological pre-history are significantly different in the low-temperature region. In high-resistivity crystals the values and characteristics of the dependences of the kinetic parameters on temperature, electric field, and doping are significantly different from the theoretical concepts of the crystalline solid. It is shown that these discrepancies are caused by the presence of chaotic macroscopic defects in the crystals studied and these crystals can be represented as a composite material consisting of a low-resistivity semiconductor matrix with high-resistivity semiconducting nano-disperser with the same chemical composition.