The electrical properties of Au/P3HT/n-type Si schottky barrier diode

Asïmov A., Ahmetoʇlu M., Kirsoy A., ÖZER M., Yasïn M.

Journal of Nanoelectronics and Optoelectronics, vol.11, no.2, pp.214-218, 2016 (SCI-Expanded, Scopus) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 11 Say: 2
  • Nəşr tarixi: 2016
  • Doi nömrəsi: 10.1166/jno.2016.1881
  • jurnalın adı: Journal of Nanoelectronics and Optoelectronics
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.214-218
  • Açar sözlər: Conducting polymers, Ideality factor, P3HT, Schottky barrier diode, Series resistance
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Yox

Qısa məlumat

We investigated the electrical properties of the Au/P3HT/n-Si Schottky diode. The ideality factor n and barrier height πb0 values of the diode were found to be 3.40 and πb0 = 0.71 eV, respectively. n ideality factor greater than unity indicates that the diode exhibits non-ideal current - voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The values of the ideality factor, series resistance and barrier height obtained from Cheung and Norde method were compared, and it was seen that there was an agreement with each other. We obtained that the high frequency capacitance does not make an important contribution to the total capacitance. Also we have been determined barrier heights increasing with increasing frequency.