Akademik Məlumat İdarəetmə Sistemi
Physica Status Solidi (A) Applications and Materials Science, vol.203, no.11, pp.2845-2851, 2006 (SCI-Expanded, Scopus)
Temperature-dependent dielectric and conduction properties of the impurity-doped and gamma-irradiated samples of TlInS 2 semiconductor-ferroelectric with incommensurate phase are presented. As found, in both cases a stable relaxor state is emerging in the material with temperature provided that the central ion in InS 4 tetrahedron is replaced by an impurity atom such as Mn or Cr, or radiation dose exceeds 400 Mrad. Same as NMR-studies, the present work drives to a conclusion that In-displacements are among the components of the order parameter of the incommensurate phase transition. The origin of the non-activated conductivity observed in the relaxor state of TlInS 2 is assumed to be resonance tunneling executed by charge carriers from electron levels in the band gap through potential barriers created by incommensurate superstructure. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.