Effect of rare-earth doping on the electrical properties of InSe single crystals

Abdinov A., Babaeva R., Bagirova A., Rzaev R.

INORGANIC MATERIALS, vol.42, pp.937-941, 2006 (SCI-Expanded)

  • Publication Type: Article / Article
  • Volume: 42
  • Publication Date: 2006
  • Journal Name: INORGANIC MATERIALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.937-941
  • Azerbaijan State University of Economics (UNEC) Affiliated: No

Abstract

The effect of rare-earth doping (R = Gd, Dy, Ho) to different levels (0, 10 -5, 10 -4, 10 -3, 10 -2, and 10 -1 at %) on threshold switching and low-frequency current oscillations in single crystals of indium selenide, a layered III-VI semiconductor, has been studied in broad ranges of temperatures (77-400 K), wavelengths (0.30-3.50 μm), and illuminances (up to ∼ 10 2 lx). The results are interpreted in terms of the anisotropic chemical bonding in n-InSe and its response to rare-earth doping.