The Charge Transport Mechanism in a New Magnetic Topological Insulator MnBi0.5Sb1.5Te4

Abdullayev N., Aliguliyeva K. V., Zverev V., Aliev Z., Amiraslanov I., Babanly M., ...daha çox

Physics of the Solid State, vol.63, no.7, pp.1120-1125, 2021 (SCI-Expanded, Scopus) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 63 Say: 7
  • Nəşr tarixi: 2021
  • Doi nömrəsi: 10.1134/s1063783421080023
  • jurnalın adı: Physics of the Solid State
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, INSPEC
  • Səhifə sayı: pp.1120-1125
  • Açar sözlər: layered crystals, magnetoresistance, phase transitions, resistivity, topological insulators, weak localization
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Bəli

Qısa məlumat

Abstract: A new layered magnetic topological insulator with the composition MnBi0.5Sb1.5Te4 is obtained. The electrical conductivity in the plane of the layers and in the direction normal to the layers is studied in the range of temperatures of 1.4–300 K. It is found that a “metallic” character of the temperature dependence of the resistivity ρ(T) is observed in the range of temperatures of 50–300 K in both directions. Below T = 50 K, the value of ρ increases and demonstrates an uncommon temperature dependence with a characteristic feature in the region of the critical temperature Tc = 23 K. The increase in the resistance in the temperature range of 50–23 K is determined by the spin fluctuations and magnetic phase transition. Below Tc and down to 1.4 K, ρ(T) demonstrates a behavior characteristic for the weak localization effect, which is confirmed by the analysis of the data obtained when studying magnetoresistance.