Photoconductivity and luminescence of CuInSe 2 single crystals at a high level of optical excitation

Guseĭnov A., Salmanov V., Məmmədov R.

Semiconductors, vol.40, no.4, pp.401-402, 2006 (SCI-Expanded, Scopus) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 40 Say: 4
  • Nəşr tarixi: 2006
  • Doi nömrəsi: 10.1134/s1063782606040051
  • jurnalın adı: Semiconductors
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.401-402
  • Adres: Bəli

Qısa məlumat

The luminance-current and spectral characteristics of photoluminescence of the CuInSe 2 single crystals are studied. The superlinear portion of the excitation-intensity dependence of photoconductivity at low excitation intensities in compensated p-CuInSe 2 crystals is explained on the basis of a recombination model. The emission band that peaked at 0.98 eV in the n-CuInSe 2 photoluminescence spectrum corresponds to radiative recombination of electrons at the donor level with a depth of 0.04 eV. The maximum in the band intensity corresponds to the energy gap between the trap level and the valence band. © Pleiades Publishing, Inc. 2006.