Physicochemical processes at the boundary between some semiconducting solid solutions and contact alloys

Alieva T. D., Abdinova G. D., Akhundova N., Ismaiylova R. A., Abdinov D. S.

RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY, vol.83, pp.2133-2135, 2009 (SCI-Expanded)

  • Publication Type: Article / Article
  • Volume: 83
  • Publication Date: 2009
  • Doi Number: 10.1134/s0036024409120231
  • Journal Name: RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.2133-2135
  • Azerbaijan State University of Economics (UNEC) Affiliated: No

Abstract

Some adhesion and electric properties of boundaries between Bi 2Te3-Sb2Te3-Gd2Te 3 solid solution crystals and Bi-Pb-Sn and Bi-Sn alloys and the formation of various intermediate phases in these systems were studied. When the alloys are applied to crystal end faces, crystals are dissolved in contact material melt and contact material components diffuse into crystals. This is accompanied by the formation of intermediate phases such as PbTe and SbTe at the boundary. The 57 wt % Bi + 43 wt % Sn alloy was found to form contacts with the systems studied with fairly low contact resistances and wetting angles and high work of adhesion and adhesion strength.