Photoelectric behavior of GaSe single crystals doped with Dy

Abdinov A., Babaeva R., Dzhafarov M., Rzaev R., Ragimova N.

INORGANIC MATERIALS, vol.35, pp.325-327, 1999 (SCI-Expanded)

  • Publication Type: Article / Article
  • Volume: 35
  • Publication Date: 1999
  • Journal Name: INORGANIC MATERIALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.325-327
  • Azerbaijan State University of Economics (UNEC) Affiliated: No

Abstract

The temperature dependences of dark conductivity and photoconductivity, spectral response of photocurrent, and photocurrent-decay curves for nominally undoped and Dy-doped (10 -3 at. %) GaSe single crystals were measured in the intrinsic- and impurity-absorption ranges. Doping of GaSe with Dy to a moderate level gives rise to intralayer ordering, contributes to interlayer bonding, reduces the density of stacking faults, improves the structural perfection of the material, and has a strong effect on its photoelectric behavior