Photoelectric behavior of GaSe single crystals doped with Dy

Abdinov A., Babaeva R., Dzhafarov M., Rzaev R., Ragimova N.

Inorganic Materials, vol.35, no.4, pp.325-327, 1999 (SCI-Expanded, Scopus) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 35 Say: 4
  • Nəşr tarixi: 1999
  • jurnalın adı: Inorganic Materials
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.325-327
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Yox

Qısa məlumat

The temperature dependences of dark conductivity and photoconductivity, spectral response of photocurrent, and photocurrent-decay curves for nominally undoped and Dy-doped (10 -3 at. %) GaSe single crystals were measured in the intrinsic- and impurity-absorption ranges. Doping of GaSe with Dy to a moderate level gives rise to intralayer ordering, contributes to interlayer bonding, reduces the density of stacking faults, improves the structural perfection of the material, and has a strong effect on its photoelectric behavior. © 1999 MAHK "Hayka/Interperiodica".