Dielectric permittivity and relaxation process investigation of C-doped TlInS<sub>2</sub> crystals

Samedov O. A., Alekperov O. Z., Orujova K. B., Huseynov E. M., Samedov S. F., Mekhtiyev N. M.

MODERN PHYSICS LETTERS B, vol.35, no.20, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 35 Issue: 20
  • Publication Date: 2021
  • Doi Number: 10.1142/s0217984921503255
  • Journal Name: MODERN PHYSICS LETTERS B
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, INSPEC, zbMATH
  • Azerbaijan State University of Economics (UNEC) Affiliated: No

Abstract

In this work, permittivity of TlInS2 and TlInS2 (5% C) crystals has been investigated at the AC field with 100-500 K temperatures ranges. tan delta temperature dependencies of TlInS2 and TlInS2 (5% C) crystals are studied at the frequency range of 25-10(6) Hz. Activation energy and ionic conductivity nature of sample were analyzed. Moreover, permittivity of these samples was studied at the perpendicular direction of axis "c" of TlInS2 (5% C) crystals. The jumping process in the TlInS2 (5% C) crystals was studied using epsilon temperature dependencies.