Copy For Citation
Abdinov A., Babayeva R., Ragimova N., Rasulov E.
Applied Physics, vol.2016-January, no.6, pp.72-76, 2016 (Scopus)
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Publication Type:
Article / Article
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Volume:
2016-January
Issue:
6
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Publication Date:
2016
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Journal Name:
Applied Physics
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Journal Indexes:
Scopus
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Page Numbers:
pp.72-76
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Keywords:
Broadband, Doping, Dysprosium, Optical detector, Optoelectronics, Photoconductivity, Rare earth element, Single crystal, Spectrum
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Azerbaijan State University of Economics (UNEC) Affiliated:
No
Abstract
Consideration is given to the effect of dysprosium doping on photoconductivity of the gallium selenide crystals (p-GaSe). It was established that most stable photoelectric parameters and characteristics of the semiconductor are observed in determining the content of the impurity (N = 10-2÷10-1 at. %). The results are explained on the basis of a double-barrier energy model for spatially inhomogeneous semiconductor. It is obtained that single p-GaSe crystals may be as suitable materials for creation of broadband photodetectors for UV and visible ranges of optical spectrum.