Photoluminescence study of Pr<SUP>3+</SUP> doped CaGa<sub>2</sub>S<sub>4</sub> in wide excitation intensity and temperature range

Leanenia M. S., Lutsenko E. V., Rzheutski M. V., Yablonskii G. P., Naghiyev T., Tagiev O. B.

JOURNAL OF APPLIED PHYSICS, vol.129, no.24, 2021 (SCI-Expanded) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 129 Say: 24
  • Nəşr tarixi: 2021
  • Doi nömrəsi: 10.1063/5.0051319
  • jurnalın adı: JOURNAL OF APPLIED PHYSICS
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Compendex, Computer & Applied Sciences, INSPEC, zbMATH
  • Adres: Bəli

Qısa məlumat

The photoluminescence (PL) of CaGa2S4:Pr3+ chalcogenide semiconductor compound is studied. The PL spectrum consists of a set of intense sharp lines at 494, 631, 654, and 741nm, formed by intra-4f transitions of Pr3+ ions. The energy level diagram of CaGa2S4:Pr3+ is proposed. A broad structural band in the PL excitation spectra in the range of 270-360nm is assumed with superposition of host related and 4f(2)-> 4f(1)5d(1) direct excitation transition bands whereas a sharp line at 456nm-with H-3(4)-> P-3(2) direct excitation. The PL decays at intensive emission lines at room temperature were found to obey nonexponential law with time constant in the range of 1.1-2.1 mu s for fast decay component and of 4.5-6.3ms for slow one. Thermal quenching by only 50% and 75% of the PL intensity of CaGa2S4:Pr3+ with 7 and 3at.% Pr3+ ions concentration, respectively, was obtained in the range of 10-300K. Extreme stability of PL spectra and efficiency of CaGa2S4:Pr3+ compound up to 10(5)W/cm(2) of excitation power density was achieved. Published under an exclusive license by AIP Publishing.