Exciton states in doped InSe and GaSe single crystals

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Dzhafarova S., Ragimova N., Abutalybov G., Gusejnov A., Abdinov A.

Fizika i Tekhnika Poluprovodnikov, vol.25, pp.983-989, 1991 (Peer-Reviewed Journal)

• Nəşrin Növü: Article / Article
• Cild: 25
• Nəşr tarixi: 1991
• jurnalın adı: Fizika i Tekhnika Poluprovodnikov
• Səhifə sayı: pp.983-989
• Açıq Arxiv Kolleksiyası: Məqalə
• Adres: Bəli

Qısa məlumat

Investigations into exiton spectra of radiation and absorption of InSe and GaSe lamellar semiconductors doped by different types of impurities (Sn, Dy, Ho) are carried out. Radiation of radiation intensity of free and fixed excitons is determined to result from shielding of Coulomb interaction between electron and hole. The detected growth of radiation intensity of free excitons in InSe crystal activated by holmium ions is linked with 'welding' of vacancies of metal and chalcogenide, as well as, with intensification of interlayer interaction due to exchange interaction by local formations, that is, of holmium ions.