Photoluminescence of rare-earth-doped InSe and GaSe single crystals

Abdinov A., Babaeva R., Rzaev R., Gasanov G.

INORGANIC MATERIALS, vol.40, pp.567-569, 2004 (SCI-Expanded)

  • Publication Type: Article / Article
  • Volume: 40
  • Publication Date: 2004
  • Journal Name: INORGANIC MATERIALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.567-569
  • Azerbaijan State University of Economics (UNEC) Affiliated: No

Abstract

The effect of doping with Gd, Ho, and Dy (10 -5 to 10 -1 at %) on the photoluminescence behavior (intensity and shape of the spectrum) of single crystals of the layered compounds InSe and GaSe is studied in the range 77-300 K. It is shown that, in both selenides, photoluminescence is of excitonic nature.