The Effect of Synthesis and Heat Treatment Modes on the Local Structure of a Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Chalcogenide Semiconductor

Garibova S. N., Isaev A. I., Mekhtieva S. I., Ataeva S. U., Alekberov R. I.

SEMICONDUCTORS, vol.56, no.3, pp.175-179, 2022 (SCI-Expanded) identifier identifier

  • Nəşrin Növü: Article / Article
  • Cild: 56 Say: 3
  • Nəşr tarixi: 2022
  • Doi nömrəsi: 10.1134/s1063782622020063
  • jurnalın adı: SEMICONDUCTORS
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, INSPEC
  • Səhifə sayı: pp.175-179
  • Adres: Yox

Qısa məlumat

Features of amorphous state-crystal phase transitions have been studied by X-ray diffractometry and Raman spectroscopy in their dependence on methods for obtaining Ge20Sb20.5Te51 chalcogenide semiconductor samples and their heat treatment, as well as changes in their structure and short-range atomic order. It is shown that the Ge20Sb20.5Te51 films synthesized by thermal evaporation on an unheated substrate are amorphous, while after heat treatment at 220 and 400 degrees C they transform into the crystalline phase with a cubic and hexagonal structure. The chemical bonds and basic structural elements that form the matrix of the investigated objects have been established and the changes occurring in them during heat treatment have been found.