Research Information System
FUNCTIONAL MATERIALS, vol.28, no.4, pp.701-708, 2021 (ESCI)
The As2S3-CdSe system was studied using differential thermal, X-ray diffraction, microstructure analyses, as well as microhardness and density measurements, and a phase diagram was constructed. It was established that a new Cd3As2S3Se3 compound is formed in the system which crystallizes in the rhombic syngony with the unit cell parameters: alpha = 0.618; b = 1,424; c = 0.782 nm, Z = 3, p(pyen) = 4.95.10(3) kg/m(3); PX-ray = 5.04 10(3) kg/m(3). In the As2S3-CdSe system, the boundaries of the glass region formed on the basis of As2S3 were determined. It was revealed that in the mode of slow cooling, the glass formation region on the basis of As2S3 extends to 15 mol. % CdSe, and in the quenching mode in air, it is 20 mol. % CdSe. For the Cd3As2S3Se3 compound, the spectral distribution of the photocurrent is investigated as a function of the wavelength. The temperature dependence of the electrical conductivity of glassy alloys with 5, 10, 15, 20 and 25 mol.% CdSe was investigated in the temperature range of 290-450 K. A nanostructured thin film of Cd3As2S3Se3 compound was obtained by vacuum deposition, and optical properties were studied. When adding low-resistance alloys with 5, 10, 15, 20 and 25 mol. % CdSe in the composition of the high-resistance compound As2S3, the electrical conductivity of the alloys increases depending on the composition and temperature.