Effect of Dy Doping on the Photoelectric Properties of GaSe Single Crystals

Abdinov A., Babaeva R., Dzhafarov M., Nurullaev Y., Rzaev R.

INORGANIC MATERIALS, vol.34, pp.205-206, 1998 (SCI-Expanded, Scopus)

  • Publication Type: Article / Article
  • Volume: 34
  • Publication Date: 1998
  • Journal Name: INORGANIC MATERIALS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.205-206
  • Open Archive Collection: Article
  • Azerbaijan State University of Economics (UNEC) Affiliated: No

Abstract

Residual conductivity, impurity photoconductivity, and IR quenching of intrinsic photocurrent were studied in GaSe layered crystals doped with Dy to 10(-5)-10(-1) at %. Doping with Dy was found to cause drastic changes in the photoelectric behavior of GaSe. Based on the results obtained for GaSe, a generalized multicenter model is proposed for III-VI layered crystals.