Photoelectric properties of structures based on TIInS2 single crystals

Iida S., MƏMMƏDOV N., Rud' V., Rud' Y.

Semiconductors, vol.32, no.1, pp.67-70, 1998 (SCI-Expanded, Scopus) identifier

  • Nəşrin Növü: Article / Article
  • Cild: 32 Say: 1
  • Nəşr tarixi: 1998
  • Doi nömrəsi: 10.1134/1.1187361
  • jurnalın adı: Semiconductors
  • Jurnalın baxıldığı indekslər: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Səhifə sayı: pp.67-70
  • Açıq Arxiv Kolleksiyası: Məqalə
  • Adres: Bəli

Qısa məlumat

The photovoltaic effect in heterocontacts of various types, viz., In/TlInS2, InSe/TlInS2, and GaSe/ TlInS2, is investigated. The relative photoconversion quantum efficiency of these structures is studied as a function of the energy of the incident photons and the polarization plane of linearly polarized light. It follows from photosensitivity measurements that the photosensitive structures obtained can be employed as broad-band and selective photosensors of optical radiation. © 1998 American Institute of Physics.