Electrical properties of PbTe and metal-semiconductor contact on its base

Ahmedova G., Aliyeva T., Abdinova G., Akhundova N., Ceferova S.

Fizika, vol.20, pp.3-7, 2014 (Peer-Reviewed Journal)

  • Nəşrin Növü: Article / Article
  • Cild: 20
  • Nəşr tarixi: 2014
  • jurnalın adı: Fizika
  • Səhifə sayı: pp.3-7
  • Adres: Yox

Qısa məlumat

It is found that the electrical parameters of single crystals of PbTe and structures on their base, the dependence of these parameters on temperature and conductivity type are essentially determined by the annealing temperature of the crystals. This is due to the change in concentration of deformation and intrinsic structural defects and creating of new charged vacancies in the tellurium sublattice during annealing.