Band structure of TIGaSe2 ternary layered crystals

Abdullaeva S., MƏMMƏDOV N.

physica status solidi (b), vol.133, no.1, pp.171-177, 1986 (Scopus) identifier

  • Publication Type: Article / Article
  • Volume: 133 Issue: 1
  • Publication Date: 1986
  • Doi Number: 10.1002/pssb.2221330120
  • Journal Name: physica status solidi (b)
  • Journal Indexes: Scopus
  • Page Numbers: pp.171-177
  • Open Archive Collection: Article
  • Azerbaijan State University of Economics (UNEC) Affiliated: Yes

Abstract

The band structure in the high‐symmetry points of the TIGaSe2, Brillouin zone is calculated by the pseudopotential method. The top of the valence band is found to be located at the Γ point. The bottom of the conduction band is located at the line Γ–Y and the additional extremum of this band – at the point Γ of the Brillouin zone of TlGaSe2. The data obtained are compared with the results of previous band calculations and optical absorption data of TlGaSe2. Copyright © 1986 WILEY‐VCH Verlag GmbH & Co. KGaA